研究员

陈晨龙

  • 职称:研究员
  • 学科:
  • 电子邮件:clchen@fjirsm.ac.cn
  • 研究方向:

    宽禁带半导体材料与器件

简介

陈晨龙,博导,课题组长。2005年3月博士毕业于中国科学院半导体研究所并留所从事科研工作。2006-2015年在海外工作从事晶体生长和宽禁带半导体材料与器件研究。2015年-至今在中国科学院福建物质结构研究所开展首创性衬底尺度纳米多孔单晶晶体和3D单晶交联纳米结构等新颖宽禁带半导体材料与器件相关研究。
长期致力于提拉法大尺寸LiGaO2、LiAlO2等晶体生长和新颖宽禁带半导体晶体材料生长及性能研究工作。主持过国家自然科学基金面上项目,中国科学院海西研究院“前瞻跨越”计划重大项目,闽都创新实验室重大引领示范类项目等。迄今在Nature Communications, Crystal Growth & Design和Journal of Crystal Growth等期刊发表50余篇SCI论文。
开创了“从0到1”多孔单晶晶体研究新领域,以第三代半导体关键材料GaN为例:以与GaN晶格相近的LiGaO2晶体为基材,通过晶体转化生长纳米多孔GaN单晶晶体。
• 简易的多孔GaN晶体生长制程,极大降低GaN单晶衬底成本;
• 可任意晶向大尺寸制备的多孔GaN单晶衬底,可解决我国欠缺非极性GaN晶体与晶向不可控瓶颈;
• 多孔结构可释放应力、缓解外延界面应力难题,大幅提升GaN基器件外延层中In/Al掺入量与外延品质。
同时,采用该首创技术还开发出AlN、组份可依需定制的AlxGa1-xN和高Sc含量的ScAlN等晶体。

代表性论著

1. Chenlong Chen, YanTing Lan, Mitch M.C. Chou*, DaRen Hang, Tao Yan, He Feng, ChunYu Lee, ShihYu Chang, ChuAn Li, Growth and Characterization of Vertically Aligned Nonpolar [1-100] Orientation ZnO Nanostructures on (100) γ‑LiAlO₂ Substrate, Crystal Growth & Design, 2012, 12, 6208−6214.

2. Chenlong Chen, ChuAn Li, ShihHsun Yu, Mitch M.C. Chou*, Growth and characterization of β-LiGaO₂ single crystal, Journal of Crystal Growth, 2014, 402, 325–329.

3. Chenlong Chen, Mitch M. C. Chou*, Tao Yan, Huichun Huang, Cheng-Ying James Lu, Chienhui Chen, The synthesis route and the growth mechanism of aligned GaN nanobelts, Chemical Communications, 2014, 50, 5695-5698.

4. Chenlong Chen, Tao Yan, ShihHsun Yu, ChunYu Lee, ChiWei Chang, Mitch M. C. Chou*, Microstructural and optical properties of high quality ZnO epitaxially grown on a LiGaO₂ substrate, RSC Advances, 2015, 5, 35405-35411.

5. Chenlong Chen*, Shujing Sun, Mitch M.C. Chou*, Kui Xie*, In situ inward epitaxial growth of bulk macroporous single crystals, Nature Communication, 2017, 8, 2178.

6. Yongchun Xiao, Yaoyao Tian, Shujing Sun, Chenlong Chen*, Buguo Wang*, Growth modulation of simultaneous epitaxy of ZnO obliquely aligned nanowire arrays and film on r-plane sapphire substrate, Nano Research, 2018, 11(7), 3864–3876.

7. Yaoyao Tian, Yongchun Xiao, Shujing Sun, Kang Li, Pengkun Li, Chenlong Chen*, Facile Route to Control over the Morphological Evolution of β-Ga₂O₃ from Nanowires to Nanoflags and to Nanosheets, Chinese Journal of Structural Chemistry, 2019, 38(1), 69-75.

8. Pengkun Li, Tinghui Xiong, Shujing Sun, Chenlong Chen*, Self-assembly and growth mechanism of N-polar knotted GaN nanowires on c-plane sapphire substrate by Au-assisted chemical vapor deposition, Journal of Alloys and Compounds, 2020, 825, 154070.

9. Pengkun Li, Tinghui Xiong, Lilin Wang, Shujing Sun, Chenlong Chen*, Facile Au-assisted epitaxy of nearly strain-free GaN films on sapphire substrates, RSC Advances, 2020, 10, 2096-2103.

10. Pengkun Li#, Lilin Wang#, Shujing Sun, Chaoyang Tu, Chenlong Chen*, The growth behaviors and high controllability of GaN nanostructures on stripe-patterned sapphire substrates, Applied Surface Science, 2021, 555, 149725.

11. Yu Miao, Bing Liang, Yaoyao Tian, Tinghui Xiong, Shujing Sun, Chenlong Chen*. Epitaxial growth of β-Ga₂O₃ nanowires from horizontal to obliquely upward evolution, Vacuum, 2021, 192, 110444.

12. Nanzheng Ji, He Chen, Lilin Wang, ChunYu Lee, KunChing Shen, Shujing Sun, Chenlong Chen*, Three-Dimensional Cross-Linked Arrays of Comb-Like ZnO: Epitaxial Growth and Modulation, Crystal Growth & Design, 2023, 23(10), 7276-7284.

13. He Chen, Nanzheng Ji, Lei Wang, Lilin Wang, Pengkun Li, Kai Peng, Difei Xue, Peiwen Lv*, Chenlong Chen*, Fast response SBPDs based on low-pressure CVD-grown β-Ga₂O₃, Optical Materials, 2024, 150, 115042.

14. Lilin Wang, Pengkun Li*, Chunyu Lee, Shujing Sun, Nanzheng Ji, He Chen, Mitch M.C. Chou*, Chenlong Chen*, Scalable nano-integration strategy: Controllable three-dimensional monocrystalline GaN nanostructures from nanobelts to nanonetwork, Journal of Alloys and Compounds, 2024, 976, 173373.

15. Pengkun Li, Lilin Wang*, He Chen, Nanzheng Ji, Chunyu Lee, Shujing Sun, Zhicheng Zhang, Mitch M.C. Chou*, Chenlong Chen*, Highly Controllable Epitaxial Growth of High-Density Nonpolar GaN Nanorod Arrays, Crystal Growth & Design, 2024, 24(7), 3055-3064.